Dependence of breakdown voltage on drift length and buried oxide thickness in SOI RESURF LDMOS transistors

Volumn , Issue , 1993, Pages 124-128

  Merchant, S ^a   Arnold, E ^a   Baumgart, H ^a   Egloff, R ^a   Letavic, T ^a   Mukherjee, S ^a   Pein, H ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC FIELDS; INTEGRAL EQUATIONS; IONIZATION; OXIDES; SILICON ON INSULATOR TECHNOLOGY; THIN FILMS;

BREAKDOWN VOLTAGE; BURIED OXIDE THICKNESS; DRIFT LENGTH; LATERAL DIFFUSED MOS; REDUCED SURFACE FIELD CONCEPT;

MOS DEVICES;

EID: 0027149649     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)