|
|
|
Volumn , Issue , 1993, Pages 264-268
|
|
Comparison of lateral EST and IGBT devices on SOI substrates
a
a
DAIMLER AG
(Germany)
|
|
Author keywords
[No Author keywords available]
|
|
Indexed keywords
BIPOLAR TRANSISTORS;
CHARACTERIZATION;
CHARGE CARRIERS;
COMPUTATIONAL METHODS;
COMPUTER SIMULATION;
GATES (TRANSISTOR);
SEMICONDUCTOR JUNCTIONS;
SILICON ON INSULATOR TECHNOLOGY;
SUBSTRATES;
THYRISTORS;
BLOCKING PROPERTIES;
EMITTER SWITCHED THYRISTORS;
FORWARD CHARACTERISTICS;
LATERAL INSULATED GATE BIPOLAR TRANSISTOR;
SOFTWARE PACKAGE SPISCES;
SEMICONDUCTOR DEVICE STRUCTURES;
|
|
EID: 0027247186
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
|
Times cited : (7)
|
|
References (3)
|
