High Temperature Performance of Dielectrically Isolated LDMOSFET, LIGBT and LEST

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1993, Pages 683-686

  Sunkavalli, Ravishankar ^a   Baliga, B Jayant ^a   Huang, Y S ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; MOS DEVICES; BIPOLAR TRANSISTORS; INTEGRATED CIRCUITS; SCHOTTKY BARRIER DIODES; THYRISTORS;

CURRENT THRESHOLDS; DEVICE PARAMETERS; FORWARD BIAS; HIGH TEMPERATURE PERFORMANCE; LDMOSFET; ON STATE CURRENT; PARASITICS; SCHOTTKY; SWITCHING CHARACTERISTICS; TRADE-OFF CURVES;

THRESHOLD VOLTAGE; MOSFET DEVICES;

DIELECTRIC ISOLATION (DI); DUAL CHANNEL; HIGH TEMPERATURE PERFORMANCE;

EID: 0027850964     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. Y.S.Huang and B.J. Baliga, "Extension o f RESURF principle to dielectrically isolated power devices," Proc. ISPSD, pp 27-30,1992.
2. S.Sridhar, Y.S.Huang and B.J.Baliga," Dielectrically Isolated Lateral High Voltage P-I-N Rectifiers for Power ICs,"IEDM Tech. Digest, abst 9.6,pp 245-248,1992.
3. Y.S. Huang, B.J. Baliga, S.Tandon and A. Riesman,"Comparision of DI and JI lateral IGBTs," Proc. ISPSD,abst 3.1,pp 40-43, 1992.
4. Y.S. Huang, S.Sridhar and B.J. Baliga, "Junctionand Dielectrically Lateral ESTs for Power ICs,"Proc ISPSD, pp259-263,1993.
5. H. Neubrand, J. Semfin, M. Fullman and J. Korec,"Comparision of Lateral EST and IGBT devices on SOI Substrates,"Proc ISPSD, pp 264-268,1993.
6. D Disney and J. Plummer,"Fast Switching LIGBT devices fabricated on SO1 substrates," Proc ISPSD, pp. 48-51,1992.
7. J. Appels and H.M.J.Vaes," High-Voltage thin layer devices (RESURF devices),"IEDM Tech. Digesr, abst 10.1,pp 238-241,1979