Fast switching LIGBT devices fabricated in SOI substrates

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn 1992-May, Issue , 1992, Pages 48-51

  Disney, D ^a   Plummer, J ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION; SEMICONDUCTOR DEVICES; SILICON ON INSULATOR TECHNOLOGY;

CHARGE STORAGE; DRIFT REGIONS; FAST SWITCHING; LATERAL INSULATED GATE BIPOLAR TRANSISTORS; SILICON-ON-INSULATOR SUBSTRATES; SOI SUBSTRATES; SPECIFIC-ON RESISTANCE; SWITCHING SPEED;

SUBSTRATES;

EID: 33747165666     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.1992.991236     Document Type: Conference Paper

References (7)

1. M. Darwish and K. Board, "Lateral resurfed COMFET, " Electron. Lett., vol. 20, p. 520, 1984.
2. Y. S. Huang and B. J. Baliga, "Extension of RESURF Principle to Dielectrically Isolated Power Devices, " 3rd Int. Symp. on Power Semiconductor Devices and ICs, pp. 27-30, 1991.
3. S. Merchant, E. Arnold, H. Baumgart, S. Mukherjee, H. Pein, and R. Pinker, "Realization of High Breakdown Voltage (>700 V) in Thin SOI Devices, " 3rd Int. Symp. on Power Semiconductor Devices and ICs, pp. 31-35, 1991.
4. N. Yasuhara, A. Nakagawa, and K. Furukawa, "SOI Device Structures Implementing 650 V High Voltage Output Devices on VLSIs, " IEDM Tech. Dig., pp. 141-144, 1991.
5. P. A. Gough, M. R. Simpson, and V. Rumennik, "Fast Switching Lateral Insulated Gate Transistor, " IEDM Tech. Dig., pp. 218-221, 1986.
6. D. N. Pattanayak, T. P. Chow, B. J. Baliga, M. S. Adler, "Complementary LIGTs for Power IC Applications, " ECS Symp. on High Voltage and Smart Power Devices, pp. 280-289, 1987.
7. D. N. Pattanayak, A. L. Robinson, T. P. Chow, M. S. Adler, B. J. Baliga, and E. J. Wilder, "n-Channel Lateral Insulated Gate Transistors: Part I - Steady-State Characteristics, " IEEE Trans. Electron Devices, vol. ED-33, no. 12, pp. 1956-63, 1986.