Comparison of junction-isolated and SOI high-voltage devices operating in the source-follower mode

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn 1992-May, Issue , 1992, Pages 242-243

  Arnold, E ^a   Merchant, S ^a   Amato, M ^a   Mukherjee, S ^a   Pein, H ^a   Ludikhuize, A ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BALLASTS (LAMP); ELECTRIC DRIVES; SILICON ON INSULATOR TECHNOLOGY;

ARBITRARY SHAPE; ELECTRONIC BALLASTS; HIGH VOLTAGE DEVICES; JUNCTION ISOLATED; LEVEL SHIFTER; LOGIC FUNCTIONS; SILICON ON INSULATOR DEVICES; SOURCE FOLLOWERS;

SEMICONDUCTOR JUNCTIONS;

EID: 33749777295     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.1992.991276     Document Type: Conference Paper

References (3)

1. S. Mukherjee, M. Amato, I. Wacyk and V. Rumennik, IEDM Tech. Dig., 1987, p. 778.
2. S. Merchant, E. Arnold, H. Baumgart, S. Mukherjee, H. Pein and R. Pinker, Proc. 3rd ISPSD, 1991, p. 31.
3. A. W. Ludikhuize, IEEE Trans. Electron Devices, ED-38, 1582 (1991).