Effect of ion implanted germanium profile on the characteristics of Si1-xGex/Si heterojunction bipolar transistors

Electronics Letters

Volumn 29, Issue 18, 1993, Pages 1621-1623

  Grahn, K ^a   Xia, Z ^a   Kuivalainen, P ^a   Karlsteen, M ^b   Willander, M ^b  

^a VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Bipolar devices; Semiconductor devices and materials; Transistors

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; HETEROJUNCTIONS; ION IMPLANTATION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON;

CURRENT GAIN;

BIPOLAR TRANSISTORS;

EID: 0027906342     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19931080     Document Type: Article

References (6)

1. IYER, S. S., PATTON, G. L., STORK, I. M. C., MEYERSON, B. S., and HARAME, D. L.: ‘Heterojunction bipolar transistors using SiGe alloys’, IEEE Trans., 1989, ED-36, pp. 2043-2064
2. PRUUBOOM, A., SLOTBOOM, J. W., GRAVESTEIJN, D. J., FREDRIKSZ, C. W., VAN GORKUM, A. A., VAN DE HEUVEL, R. A., VAN ROOU-MULDER, J. L. M., STREUKER, G., and VAN DE WALLE, G. F. A.: ‘Heterojunction bipolar transistors with SiGe base grown by molecular beam epitaxy’, IEEE Electron Device Lett., 1991,12, pp. 357-359
3. FUKAMI, A., SHOJl, K., NAGANO, T., TOKUYAMA, T., and YANG, C. Y.: ‘Graded-bandgap SiGe bipolar transistors fabricated with germanium ion implantation’, Microelectron. Eng., 1991,15, pp. 15-18
4. GRAHN, K.: Two-dimensional numerical modelling of advanced semiconductor devices from the physical point of view’. PhD Thesis (to be published)
5. MANKU, T., and NATHAN, A.: ‘Electron drift mobility model for devices based on unstrained and coherently strained Si1-xGex grown on <001> silicon substrate’, IEEE Trans., 1992, ED-39, pp. 2028-2089
6. HINKLEY, M., and SINGH, J.: ‘Hole transport theory in pseudomorphic Si1-xGex alloys grown on Si(001) substrate’, Phys. Rev. B., 1990,41, pp. 2912-2926