Si/GexSi1-x HBTs with the GexSi1-x base formed by high dose Ge implantation in Si

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 1019-1021

  Lombardo, S ^a   Pinto, A ^a   Raineri, V ^a   Ward, P ^a   Campisano, S U ^a  

^a CNR IMETEM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ION IMPLANTATION; RECRYSTALLIZATION (METALLURGY); SEMICONDUCTING GERMANIUM; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

BASE COLLECTOR JUNCTION; GUMMEL PLOTS; RAPID THERMAL ANNEALING; SILICON GERMANIUM SILICIDE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0029492060     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)