Heterojunction Bipolar Transistors Using Si-Ge Alloys

IEEE Transactions on Electron Devices

Volumn 36, Issue 10, 1989, Pages 2043-2064

  Iyer, Subramanian S ^a   Patton, Gary L ^a   Stork, Johannes M ^a   Meyerson, Bernard S ^a   Harame, David L ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; SILICON GERMANIUM ALLOYS;

BANDGAPS; HETEROJUNCTION BIPOLAR TRANSISTORS;

TRANSISTORS, BIPOLAR;

EID: 0024752976     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.40887     Document Type: Article

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