Si/GexSi1-x heterojunction bipolar transistors with the GexSi1-x base formed by Ge ion implantation in Si

IEEE Electron Device Letters

Volumn 17, Issue 10, 1996, Pages 485-487

  Lombardo, S ^a,b   Pinto, A ^a,c   Raineri, V ^b   Ward, P ^a,c   La Rosa, G ^c   Privitera, G ^c   Campisano, S U ^b  

^a IEEE

^b CNR IMETEM   (Italy)

^c CORIMME ^*  (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; EPITAXIAL GROWTH; FABRICATION; ION IMPLANTATION; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

CURRENT GAIN; HOMOJUNCTION TRANSISTORS; POLYSILICON PROCESS; SOLID PHASE EPITAXY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030271061     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.537083     Document Type: Article

References (16)

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