SiGe-HBTs with high fτat moderate current densities

Electronics Letters

Volumn 30, Issue 14, 1994, Pages 1187-1188

  Schuppen A ^a   Gruhle, A ^a   Kibbel, H ^a   Konig U ^a   Erben, U ^b  

^a DAIMLER AG   (Germany)

^b UNIVERSITY OF ULM   (Germany)

Author keywords

Heterojunction bipolar transistors; Silicongermanium

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC FREQUENCY MEASUREMENT; FOUR WAVE MIXING; HEATING; HETEROJUNCTIONS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

COLLECTORS; CURRENT DENSITY; CUT OFF FREQUENCY; GAIN FREQUENCY; HETEROJUNCTION BIPOLAR TRANSISTORS;

BIPOLAR TRANSISTORS;

EID: 0028767482     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19940774     Document Type: Article

References (7)

1. Tgraded-base SiGe HBTs’. Device Research Conf., 1993
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3. Gruhle, A., Kibbel, H., Erben, U., and Kasper, E.: ‘91GHz SiGe HBTs grown by MBE’, Electron. Lett., 1993, 29, (4), pp. 415-416
4. maxIEEE Electron Device Lett., 1992, 13, (4), pp. 206-208
5. Kasper, E., Gruhle, A., and Kibbel, H.: ‘High speed SiGe-HBT with very low base sheet resistivity’. Tech. Dig. IEDM 93, 1993, pp. 79-81
6. Gao, G., Fan, Z., and Moroç, H.: ‘Analysis of cut-off frequency rolloff at high current in SiGe double-heterojunction bipolar transistors’, Appl. Phys. Lett., 1991, 58, (25), pp. 2951-2953
7. Crabbé, E. F., Meyerson, B. S., Stork, J. M. C., and Harame, D. L.: ‘Vertical profile optimization of very high frequency epitaxial Si-and SiGe-base bipolar transistors’. Tech. Dig. IEDM 93, 1993, pp. 83-86