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Applied Physics Letters

Volumn , Issue , 1995, Pages 580-

Effects of strain on boron diffusion in Si and Si1-xGex

(5) Kuo, P a Hoyt, J L a Gibbons, J F a Turner, J E b Lefforge, D b

a STANFORD UNIVERSITY (United States)

b HEWLETT PACKARD COMPANY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36449006281 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.114019 Document Type: Article

Times cited : (109)

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