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Journal of Applied Physics

Volumn 69, Issue 5, 1991, Pages 2931-2937

The effect of implant energy, dose, and dynamic annealing on end-of-range damage in Ge+-implanted silicon

(2) Jones, K S a Venables, D a

a UNIVERSITY OF FLORIDA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001315145 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.348603 Document Type: Article

Times cited : (55)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.