On Physical Models for Gate Oxide Breakdown

IEEE Electron Device Letters

Volumn 5, Issue 8, 1984, Pages 302-305

  Holland, S ^a   Chen, I C ^a   Hu, C ^a   Ma, T P ^b,c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c YALE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC BREAKDOWN - TESTING; SEMICONDUCTING SILICON COMPOUNDS - THIN FILMS;

SILICON DIOXIDE;

SEMICONDUCTOR DEVICES, MOS;

EID: 0021477131     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1984.25925     Document Type: Article

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7. To be published.
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