Dynamic model of trapping-detrapping in SiO2

Journal of Applied Physics

Volumn 58, Issue 6, 1985, Pages 2252-2261

  Nissan Cohen, Y ^a   Shappir, J ^b   Frohman Bentchkowsky, D ^b  

^a GE GLOBAL RESEARCH   (United States)

^b HEBREW UNIVERSITY OF JERUSALEM   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000046908     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.335942     Document Type: Article

References (0)