DEGRADATION OF VERY THIN GATE OXIDE MOS DEVICES UNDER DYNAMIC HIGH FIELD/CURRENT STRESS.

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1986, Pages 394-398

  Liang, Mong Song ^a   Haddad, Sameer ^a   Cox, William ^a   Cagnina, Salvatore ^a  

^a ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

OXIDES - STRESSES; SEMICONDUCTOR MATERIALS - ELECTRIC BREAKDOWN;

CHARGE-TO-BREAKDOWN; DYNAMIC HIGH FIELD/CURRENT STRESSING; OXIDE TIME-TO-BREAKDOWN; POSITIVE OXIDE CHARGE DETRAPPING; THIN OXIDE WEAROUT MECHANISM;

SEMICONDUCTOR DEVICES, MOS;

EID: 0022957162     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)