Electrical Breakdown in Thin Gate and Tunneling Oxides

IEEE Journal of Solid-State Circuits

Volumn 20, Issue 1, 1985, Pages 333-342

  Chen, Ih Chin ^a   Holland, Stephen E ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; SEMICONDUCTOR MATERIALS - ELECTRIC PROPERTIES;

CURRENT INJECTION; HOLE TRAPPING; IMPACT IONIZATION; OXIDE WEAROUT PERFORMANCE; THIN OXIDES;

SEMICONDUCTOR DEVICES;

EID: 0022008804     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/JSSC.1985.1052311     Document Type: Article

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