Ionizing dose hardness assurance methodology for qualification of a bicmos technology dedicated to high dose level applications

IEEE Transactions on Nuclear Science

Volumn 45, Issue 3 PART 3, 1998, Pages 1420-1424

  Flament, O ^a  

^a DIF   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BIPOLAR TRANSISTORS; CMOS INTEGRATED CIRCUITS; DOSIMETRY; GAMMA RAYS; HARDNESS; IRRADIATION; JUNCTION GATE FIELD EFFECT TRANSISTORS; RADIATION EFFECTS; X RAYS;

ISOCHRONAL ANNEALS; POST IRRADIATION EFFECTS; RADIATION HARDNESS ASSURANCE METHOD;

INTEGRATED CIRCUIT TESTING;

EID: 0032097466     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.685217     Document Type: Article

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