Determining the energy distribution of pulse-radiation-induced charge in MOS structures from rapid annealing measurements

IEEE Transactions on Nuclear Science

Volumn 19, Issue 6, 1972, Pages 282-290

  Simons, M ^a   Hughes, H L ^b  

^a RTI INTERNATIONAL   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84937351137     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1972.4326846     Document Type: Article

References (16)

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4. H. L. Hughes, R. D. Baxter, and B. Phillips, “Dependence of MOS Device Radiation Sensitivity or, Oxide Impurities,” IEEE Trans. on Nuclear Science NS-19 (1972). (This issue)
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9. E. Lell, N. J. Kreidl, and J. R. Hensler in Progress in Ceramic Science, Vol. 4, edited by J. Burke, Pergamon Press, New York, 1966.
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12. Electronic Processes in Ionic Crystals, N. F. Mott and R. W. Gurney, 2nd Edition, Dover, New York, 1964.
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