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Volumn 36, Issue 6, 1989, Pages 1963-1970

An improved standard total dose test for CMOS space electronics

Author keywords

[No Author keywords available]

Indexed keywords

DOSIMETRY; GAMMA RAYS; HEAT TREATMENT--ANNEALING; TRANSISTORS, BIPOLAR--SPACE APPLICATIONS;

EID: 0024891801     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.45393     Document Type: Article
Times cited : (68)

References (22)
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    • Johnston, A.H.1
  • 3
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    • Total Dose Failure Mechanisms of Integrated Circuits in Laboratory and Space Environments
    • P. S. Winokur, F. W. Sexton, G. L. Hash, and D. C. Turpin, “Total Dose Failure Mechanisms of Integrated Circuits in Laboratory and Space Environments,” IEEE Trans. Nuc. Sci. NS-34, 1448 (1987).
    • (1987) IEEE Trans. Nuc. Sci , vol.NS-34 , pp. 1448
    • Winokur, P.S.1    Sexton, F.W.2    Hash, G.L.3    Turpin, D.C.4
  • 4
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    • Using Laboratory X-ray and Cobalt-60 Irradiations to Predict CMOS Device Response in Strategic and Space Environments
    • D. M. Fleetwood, P. S. Winokur, and J. R. Schwank, “Using Laboratory X-ray and Cobalt-60 Irradiations to Predict CMOS Device Response in Strategic and Space Environments,” IEEE Trans. Nuc. Sci. NS-35, 1497 (1988).
    • (1988) IEEE Trans. Nuc. Sci , vol.NS-35 , pp. 1497
    • Fleetwood, D.M.1    Winokur, P.S.2    Schwank, J.R.3
  • 7
    • 0022879598 scopus 로고
    • Total Dose Hardness Assurance for Microcircuits for Space Environment
    • P. Buchman, “Total Dose Hardness Assurance for Microcircuits for Space Environment,” IEEE Trans. Nuc. Sci. NS-33, 1352 (1986).
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    • Buchman, P.1
  • 8
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    • Correlating the Radiation Response of MOS Capacitors and Transistors
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    • P. S. Winokur, J. R. Schwank, P. J. McWhorter, P. V. Dressendorfer, and D. C. Turpin, “Correlating the Radiation Response of MOS Capacitors and Transistors,” IEEE Trans. Nuc. Sci. NS-31, 1453 (1984); P. J. McWhorter and P. S. Winokur, “Simple Technique for Separating the Effects of Interface Traps and Trapped-Oxide Charge in Metal-Oxide-Semiconductor Transistors,” Appl. Phys. Lett. 48, 133 (1986).
    • (1984) IEEE Trans. Nuc. Sci , vol.NS-31 , pp. 1453
    • Winokur, P.S.1    Schwank, J.R.2    McWhorter, P.J.3    Dressendorfer, P.V.4    Turpin, D.C.5
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    • A Reevaluation of Worst-Case Postirradiation Response for Hardened MOS Transistors
    • D. M. Fleetwood and P. V. Dressendorfer, “A Simple Method to Identify Radiation and Annealing Biases that Lead to Worst Case CMOS Static RAM Postirradiation Response, ” Ibid, 1408
    • D. M. Fleetwood, P. V. Dressendorfer, and D. C. Turpin, “A Reevaluation of Worst-Case Postirradiation Response for Hardened MOS Transistors,” IEEE Trans. Nuc. Sci. NS-34, 1178 (1987); D. M. Fleetwood and P. V. Dressendorfer, “A Simple Method to Identify Radiation and Annealing Biases that Lead to Worst Case CMOS Static RAM Postirradiation Response,” Ibid, 1408.
    • (1987) IEEE Trans. Nuc. Sci , vol.NS-34 , pp. 1178
    • Fleetwood, D.M.1    Dressendorfer, P.V.2    Turpin, D.C.3
  • 11
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    • Process Optimization of Radiation-Hardened CMOS Integrated Circuits
    • G. F. Derbenwick and B. L. Gregory, “Process Optimization of Radiation-Hardened CMOS Integrated Circuits,” IEEE Trans. Nuc. Sci. NS-22, 2151 (1975).
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    • Derbenwick, G.F.1    Gregory, B.L.2
  • 12
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    • Predicting CMOS Inverter Response in Nuclear and Space Environments
    • P. S. Winokur, K. G. Kerris, and L. Harper, “Predicting CMOS Inverter Response in Nuclear and Space Environments,” IEEE Trans. Nuc. Sci. NS-30, 4326 (1983).
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  • 13
    • 84939763317 scopus 로고
    • Ionizing Radiation Effects Studies on 4000 Series CMOS Integrated Circuits
    • October
    • C. A. Goben, J. R. Coss, and W. E. Price, JPL D-4841, Rev. A, “Ionizing Radiation Effects Studies on 4000 Series CMOS Integrated Circuits,” (October 1987).
    • (1987) JPL D-4841, Rev. A
    • Goben, C.A.1    Coss, J.R.2    Price, W.E.3
  • 15
    • 84939740279 scopus 로고
    • Premature Failures at Low Dose Rates in SGS 4007 CMOS Devices
    • December
    • C. A. Goben and W. E. Price, JPL D-5996, Rev. A, “Premature Failures at Low Dose Rates in SGS 4007 CMOS Devices,” (December 1988).
    • (1988) JPL D-5996, Rev. A
    • Goben, C.A.1    Price, W.E.2
  • 16
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    • private communication.
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  • 17
    • 0018158325 scopus 로고
    • Enhanced Flatband Voltage Recovery in Hardened Thin MOS Capacitors
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    • (1978) IEEE Trans. Nuc. Sci , vol.NS-25 , pp. 1239
    • Boesch, H.E.1    McLean, F.B.2    McGarrity, J.M.3    Winokur, P.S.4
  • 18
    • 84939046507 scopus 로고
    • A Framework for an Integrated Set of Standards for Ionizing Radiation Testing of Microelectronics
    • D. B. Brown and A. H. Johnston, “A Framework for an Integrated Set of Standards for Ionizing Radiation Testing of Microelectronics,” IEEE Trans. Nuc. Sci. NS-34, 1720 (1987).
    • (1987) IEEE Trans. Nuc. Sci , vol.NS-34 , pp. 1720
    • Brown, D.B.1    Johnston, A.H.2
  • 20
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    • Hardness Assurance Considerations for Long-Term Ionizing Radiation Effects on Bipolar Structures
    • A. R. Hart, J. B. Smyth, Jr., V. A. J. van Lint, D. P. Snowden, and R. E. Leadon, “Hardness Assurance Considerations for Long-Term Ionizing Radiation Effects on Bipolar Structures,” IEEE Trans. Nuc. Sci. NS-25, 1502 (1978).
    • (1978) IEEE Trans. Nuc. Sci , vol.NS-25 , pp. 1502
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  • 21
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    • Total Dose Induced Hole Trapping in Trench Oxides
    • this issue.
    • E. W. Enlow, R. L. Pease, W. E. Combs, and D. G. Platteter, “Total Dose Induced Hole Trapping in Trench Oxides,” this issue.
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  • 22
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    • Investigation of Radiation-Induced Interface States Utilizing Gated Bipolar and MOS Structures
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.