-
1
-
-
0021609581
-
Super Recovery of Total Dose Damage in MOS Devices
-
A. H. Johnston, “Super Recovery of Total Dose Damage in MOS Devices,” IEEE Trans. Nuc. Sci. NS-31, 1427 (1984).
-
(1984)
IEEE Trans. Nuc. Sci
, vol.NS-31
, pp. 1427
-
-
Johnston, A.H.1
-
2
-
-
6044220553
-
Total Dose Radiation and Annealing Studies: Implications for Hardness Assurance Testing
-
P. S. Winokur, F. W. Sexton, J. R. Schwank, D. M. Fleetwood, P. V. Dressendorfer, T. F. Wrobel, and D. C. Turpin, “Total Dose Radiation and Annealing Studies: Implications for Hardness Assurance Testing,” IEEE Trans. Nuc. Sci. NS-33, 1343 (1986).
-
(1986)
IEEE Trans. Nuc. Sci
, vol.NS-33
, pp. 1343
-
-
Winokur, P.S.1
Sexton, F.W.2
Schwank, J.R.3
Fleetwood, D.M.4
Dressendorfer, P.V.5
Wrobel, T.F.6
Turpin, D.C.7
-
3
-
-
3743153188
-
Total Dose Failure Mechanisms of Integrated Circuits in Laboratory and Space Environments
-
P. S. Winokur, F. W. Sexton, G. L. Hash, and D. C. Turpin, “Total Dose Failure Mechanisms of Integrated Circuits in Laboratory and Space Environments,” IEEE Trans. Nuc. Sci. NS-34, 1448 (1987).
-
(1987)
IEEE Trans. Nuc. Sci
, vol.NS-34
, pp. 1448
-
-
Winokur, P.S.1
Sexton, F.W.2
Hash, G.L.3
Turpin, D.C.4
-
4
-
-
0024168776
-
Using Laboratory X-ray and Cobalt-60 Irradiations to Predict CMOS Device Response in Strategic and Space Environments
-
D. M. Fleetwood, P. S. Winokur, and J. R. Schwank, “Using Laboratory X-ray and Cobalt-60 Irradiations to Predict CMOS Device Response in Strategic and Space Environments,” IEEE Trans. Nuc. Sci. NS-35, 1497 (1988).
-
(1988)
IEEE Trans. Nuc. Sci
, vol.NS-35
, pp. 1497
-
-
Fleetwood, D.M.1
Winokur, P.S.2
Schwank, J.R.3
-
5
-
-
0021587257
-
Physical Mechanisms Contributing to Device Rebound
-
J. R. Schwank, P. S. Winokur, P. J. McWhorter, F. W. Sexton, P. V. Dressendorfer, and D. C. Turpin, “Physical Mechanisms Contributing to Device Rebound,” IEEE Trans. Nuc. Sci. NS-31, 1434 (1984).
-
(1984)
IEEE Trans. Nuc. Sci
, vol.NS-31
, pp. 1434
-
-
Schwank, J.R.1
Winokur, P.S.2
McWhorter, P.J.3
Sexton, F.W.4
Dressendorfer, P.V.5
Turpin, D.C.6
-
6
-
-
0023593395
-
Post-Irradiation Effects in Field-Oxide Isolation Structures
-
T. R. Oldham, A. J. Lelis, H. E. Boesch, Jr., J. M. Benedetto, F. B. McLean, and J. M. McGarrity, “Post-Irradiation Effects in Field-Oxide Isolation Structures,” IEEE Trans. Nuc. Sci. NS-34, 1184 (1987).
-
(1987)
IEEE Trans. Nuc. Sci
, vol.NS-34
, pp. 1184
-
-
Oldham, T.R.1
Lelis, A.J.2
Boesch, H.E.3
Benedetto, J.M.4
McLean, F.B.5
McGarrity, J.M.6
-
7
-
-
0022879598
-
Total Dose Hardness Assurance for Microcircuits for Space Environment
-
P. Buchman, “Total Dose Hardness Assurance for Microcircuits for Space Environment,” IEEE Trans. Nuc. Sci. NS-33, 1352 (1986).
-
(1986)
IEEE Trans. Nuc. Sci
, vol.NS-33
, pp. 1352
-
-
Buchman, P.1
-
8
-
-
0021605304
-
Correlating the Radiation Response of MOS Capacitors and Transistors
-
P. J. McWhorter and P. S. Winokur, “Simple Technique for Separating the Effects of Interface Traps and Trapped-Oxide Charge in Metal-Oxide-Semiconductor Transistors, ” Appl. Phys. Lett. 48, 133 (1986)
-
P. S. Winokur, J. R. Schwank, P. J. McWhorter, P. V. Dressendorfer, and D. C. Turpin, “Correlating the Radiation Response of MOS Capacitors and Transistors,” IEEE Trans. Nuc. Sci. NS-31, 1453 (1984); P. J. McWhorter and P. S. Winokur, “Simple Technique for Separating the Effects of Interface Traps and Trapped-Oxide Charge in Metal-Oxide-Semiconductor Transistors,” Appl. Phys. Lett. 48, 133 (1986).
-
(1984)
IEEE Trans. Nuc. Sci
, vol.NS-31
, pp. 1453
-
-
Winokur, P.S.1
Schwank, J.R.2
McWhorter, P.J.3
Dressendorfer, P.V.4
Turpin, D.C.5
-
9
-
-
84939725498
-
Strategies for Lot Acceptance Testing Using CMOS Transistors and ICs
-
this issue.
-
J. R. Schwank, F. W. Sexton, D. M. Fleetwood, M. R. Shaneyfelt, K. L. Hughes, and M. S. Rodgers, “Strategies for Lot Acceptance Testing Using CMOS Transistors and ICs,” this issue.
-
-
-
Schwank, J.R.1
Sexton, F.W.2
Fleetwood, D.M.3
Shaneyfelt, M.R.4
Hughes, K.L.5
Rodgers, M.S.6
-
10
-
-
0041302432
-
A Reevaluation of Worst-Case Postirradiation Response for Hardened MOS Transistors
-
D. M. Fleetwood and P. V. Dressendorfer, “A Simple Method to Identify Radiation and Annealing Biases that Lead to Worst Case CMOS Static RAM Postirradiation Response, ” Ibid, 1408
-
D. M. Fleetwood, P. V. Dressendorfer, and D. C. Turpin, “A Reevaluation of Worst-Case Postirradiation Response for Hardened MOS Transistors,” IEEE Trans. Nuc. Sci. NS-34, 1178 (1987); D. M. Fleetwood and P. V. Dressendorfer, “A Simple Method to Identify Radiation and Annealing Biases that Lead to Worst Case CMOS Static RAM Postirradiation Response,” Ibid, 1408.
-
(1987)
IEEE Trans. Nuc. Sci
, vol.NS-34
, pp. 1178
-
-
Fleetwood, D.M.1
Dressendorfer, P.V.2
Turpin, D.C.3
-
11
-
-
0001399549
-
Process Optimization of Radiation-Hardened CMOS Integrated Circuits
-
G. F. Derbenwick and B. L. Gregory, “Process Optimization of Radiation-Hardened CMOS Integrated Circuits,” IEEE Trans. Nuc. Sci. NS-22, 2151 (1975).
-
(1975)
IEEE Trans. Nuc. Sci
, vol.NS-22
, pp. 2151
-
-
Derbenwick, G.F.1
Gregory, B.L.2
-
12
-
-
0020936776
-
Predicting CMOS Inverter Response in Nuclear and Space Environments
-
P. S. Winokur, K. G. Kerris, and L. Harper, “Predicting CMOS Inverter Response in Nuclear and Space Environments,” IEEE Trans. Nuc. Sci. NS-30, 4326 (1983).
-
(1983)
IEEE Trans. Nuc. Sci
, vol.NS-30
, pp. 4326
-
-
Winokur, P.S.1
Kerris, K.G.2
Harper, L.3
-
13
-
-
84939763317
-
Ionizing Radiation Effects Studies on 4000 Series CMOS Integrated Circuits
-
October
-
C. A. Goben, J. R. Coss, and W. E. Price, JPL D-4841, Rev. A, “Ionizing Radiation Effects Studies on 4000 Series CMOS Integrated Circuits,” (October 1987).
-
(1987)
JPL D-4841, Rev. A
-
-
Goben, C.A.1
Coss, J.R.2
Price, W.E.3
-
15
-
-
84939740279
-
Premature Failures at Low Dose Rates in SGS 4007 CMOS Devices
-
December
-
C. A. Goben and W. E. Price, JPL D-5996, Rev. A, “Premature Failures at Low Dose Rates in SGS 4007 CMOS Devices,” (December 1988).
-
(1988)
JPL D-5996, Rev. A
-
-
Goben, C.A.1
Price, W.E.2
-
16
-
-
84939736054
-
-
private communication.
-
K. G. Kerris, private communication.
-
-
-
Kerris, K.G.1
-
17
-
-
0018158325
-
Enhanced Flatband Voltage Recovery in Hardened Thin MOS Capacitors
-
H. E. Boesch, Jr., F. B. McLean, J. M. McGarrity, and P. S. Winokur, “Enhanced Flatband Voltage Recovery in Hardened Thin MOS Capacitors,” IEEE Trans. Nuc. Sci. NS-25, 1239 (1978).
-
(1978)
IEEE Trans. Nuc. Sci
, vol.NS-25
, pp. 1239
-
-
Boesch, H.E.1
McLean, F.B.2
McGarrity, J.M.3
Winokur, P.S.4
-
18
-
-
84939046507
-
A Framework for an Integrated Set of Standards for Ionizing Radiation Testing of Microelectronics
-
D. B. Brown and A. H. Johnston, “A Framework for an Integrated Set of Standards for Ionizing Radiation Testing of Microelectronics,” IEEE Trans. Nuc. Sci. NS-34, 1720 (1987).
-
(1987)
IEEE Trans. Nuc. Sci
, vol.NS-34
, pp. 1720
-
-
Brown, D.B.1
Johnston, A.H.2
-
19
-
-
84939718331
-
An Assessment of the SEU and Total-Dose Hardness of Large Satellite Memories in Low Earth Orbit
-
this issue.
-
E. P. Evans, S. B. Roeske, J. W. Griffee, J. S. Browning, D. B. Holtkamp, W. C. Priedhorsky, G. B. Stoddard, and J. Ricci, “An Assessment of the SEU and Total-Dose Hardness of Large Satellite Memories in Low Earth Orbit,” this issue.
-
-
-
Evans, E.P.1
Roeske, S.B.2
Griffee, J.W.3
Browning, J.S.4
Holtkamp, D.B.5
Priedhorsky, W.C.6
Stoddard, G.B.7
Ricci, J.8
-
20
-
-
0018111401
-
Hardness Assurance Considerations for Long-Term Ionizing Radiation Effects on Bipolar Structures
-
A. R. Hart, J. B. Smyth, Jr., V. A. J. van Lint, D. P. Snowden, and R. E. Leadon, “Hardness Assurance Considerations for Long-Term Ionizing Radiation Effects on Bipolar Structures,” IEEE Trans. Nuc. Sci. NS-25, 1502 (1978).
-
(1978)
IEEE Trans. Nuc. Sci
, vol.NS-25
, pp. 1502
-
-
Hart, A.R.1
Smyth, J.B.2
van Lint, V.A.J.3
Snowden, D.P.4
Leadon, R.E.5
-
22
-
-
0009042642
-
Investigation of Radiation-Induced Interface States Utilizing Gated Bipolar and MOS Structures
-
L. L. Sivo, H. L. Hughes, and E. E. King, “Investigation of Radiation-Induced Interface States Utilizing Gated Bipolar and MOS Structures,” IEEE Trans. Nuc. Sci. NS-19, 313 (1972).
-
(1972)
IEEE Trans. Nuc. Sci
, vol.NS-19
, pp. 313
-
-
Sivo, L.L.1
Hughes, H.L.2
King, E.E.3
|