A New Approach to Determine the Effective Channel Length and the Drain-and-Source Series Resistance of Miniaturized MOSFET’s

IEEE Transactions on Electron Devices

Volumn 41, Issue 10, 1994, Pages 1811-1818

  Hsu, Charles Ching Hsiang ^b   Chung, Steve Shao Shiun ^a  

^a LOVELACE RESPIRATORY RESEARCH INSTITUTE   (United States)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CAPACITANCE; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); MATHEMATICAL MODELS; SEMICONDUCTOR DOPING;

CHARGE SHARING EFFECT; DRAIN AND SOURCE SERIES RESISTANCE; TWO DIMENSIONAL;

MOSFET DEVICES;

EID: 0028517119     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.324592     Document Type: Article

References (17)

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