GATE-VOLTAGE-DEPENDENT EFFECTIVE CHANNEL LENGTH AND SERIES RESISTANCE OF LDD MOSFET'S.

IEEE Transactions on Electron Devices

Volumn ED-34, Issue 12, 1987, Pages

  Hu, Genda J ^a   Chang, Chi ^a   Chia, Yu Tai ^a  

^a CA USA ^*

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL TECHNIQUES - ALGORITHMS;

GATE-VOLTAGE-DEPENDENT EFFECTIVE CHANNEL LENGTH; LIGHTLY DOPED DRAIN-SOURCE; MEASUREMENT ALGORITHM; SOURCE-DRAIN SERIES RESISTANCE;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0023570547     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (16)