A sub-half micron partially gate-to-drain overlapped MOSFET optimized for high performance and reliability

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1991-January, Issue , 1991, Pages 545-548

  Chen, I C ^a   Chapman, R A ^a   Teng, C W ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LIFETIME; DRAIN CURRENT; ELECTRON DEVICES; HOT CARRIERS; HOT ELECTRONS; RECONFIGURABLE HARDWARE; RELIABILITY;

HIGH RELIABILITY; HIGH RESISTANCE; HOT CARRIER STRESSING; N-CHANNEL DEVICES; ORDERS OF MAGNITUDE; PERFORMANCE AND RELIABILITIES; PERFORMANCE LEVEL; SELECTIVE REMOVAL;

MOSFET DEVICES;

EID: 84954143657     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1991.235411     Document Type: Conference Paper

References (0)