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Surface Science

Volumn 58, Issue 1, 1976, Pages 178-181

Electron scattering in silicon inversion layers by oxide and surface roughness

(3) Hartstein, A a Ning, T H a Fowler, A B a

a IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 49549126543 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/0039-6028(76)90131-X Document Type: Article

Times cited : (123)

References (14)

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- Stern¹ Howard²

2
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- (1968) Phys. Rev. , vol.168 , pp. 779
- Prange¹ Nee²

3
- 84917984038
- P. Kwok, private communication, 1966.

4
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- (1973) Surface Sci. , vol.34 , pp. 717
- Cheng¹ Sullivan²

5
- 84917984037
- (1974) Proc. 2nd Intern. Conf. on Solid Surfaces
- Matsumoto¹ Uemura²

6
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- Pt2
- (1974) Japan. J. Appl. Phys. , pp. 367

7
- 84918012398
- (1973) Bull. Am. Phys. Soc. , vol.18 , pp. 344
- Ning¹ Sah²

8
- 0003406742
- See, for instance, 3rd ed., Wiley, New York
- (1966) Introduction to Solid State Physics , pp. 218
- Kittel¹

9
- 28244435848
- (1975) J. Phys. C (Solid State Phys.) , vol.8 , pp. L249
- Hartstein¹ Fowler²

10
- 33144459054
- Oxide-Charge-Induced Impurity Level in Silicon Inversion Layers
- (1975) Physical Review Letters , vol.34 , pp. 1435

11
- 3643141547
- (1975) Phys. Rev. Letters , vol.34 , pp. 15
- Fowler¹

12
- 84917984035
- T.H. D. Stefano and M. Schatzkes, to be published.

13
- 84917984034
- F. Stern, private communication.

14
- 0016508265
- (1975) J. Appl. Phys. , vol.46 , pp. 2181
- Brews¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.