Inversion-Layer Capacitance and Mobility of Very Thin Gate-Oxide MOSFET's

IEEE Transactions on Electron Devices

Volumn 33, Issue 3, 1986, Pages 409-413

  Liang, Mong Song ^a   Cho, Jeong Yeol ^a   Ko, Ping Keung ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC MEASUREMENTS - CAPACITANCE;

INVERSION LASER CAPACITANCE; THIN GATE-OXIDE MOSFET;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0022688857     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1986.22502     Document Type: Article

References (11)

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10. S. M. Sze, Physics of Semiconductor Devices, ch. 7. New York: Wiley, 1981.
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