A New Approach to Determine the Drain-and-Source Series Resistance of LDD MOSFET's

IEEE Transactions on Electron Devices

Volumn 40, Issue 9, 1993, Pages 1709-1711

  Chung, Steve Shao Shiun ^a   Lee, Jenq Sheng ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; ELECTRIC RESISTANCE MEASUREMENT; VOLTAGE MEASUREMENT;

CURRENT-VOLTAGE CHARACTERISTICS; DRAIN-AND-SOURCE SERIES RESISTANCE; EFFECTIVE CHANNEL LENGTH; LDD MOSFETS; PARAMETER EXTRACTION PROCEDURE;

MOSFET DEVICES;

EID: 0027656616     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.231580     Document Type: Article

References (7)

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3. P.I. Suciu and R. Jonston, “Experimental derivation of the source and drain resistance of MOS transistors,” IEEE Trans. Electron Devices, vol. ED-27, pp. 1846–1848, 1980.
4. B.J. Sheu, C. Hu, P.K. Ko, and F.-C. Hsu, “Source-and-drain series resistance of LDD MOSFET's,” IEEE Electron Device Lett., vol. EDL-5, pp. 365–367, 1984.
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7. F.H. De La Moneda, H.N. Kotecha, and M. Shatzkes, “Measurement of MOSFET constants,” IEEE Electron DeviceLett., vol. EDL-3, pp. 10–12, 1982.