Electron Mobility Behavior in Extremely Thin SOI MOSFET's

IEEE Electron Device Letters

Volumn 16, Issue 11, 1995, Pages 527-529

  Choi, Jin Hyeok ^a   Park, Young June ^a   Min, Hong Shick ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC FIELDS; ELECTRIC RESISTANCE; ELECTRIC VARIABLES MEASUREMENT; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY; THIN FILMS;

ELECTRON MOBILITY; FILM THICKNESS; GATE RECESSED STRUCTURE; SOURCE/DRAIN SERIES RESISTANCE; THIN SILICON FILMS;

MOSFET DEVICES;

EID: 0029403828     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.468289     Document Type: Article

References (12)

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