Mobility-Field Behavior of Fully Depleted SOI MOSFET's

IEEE Electron Device Letters

Volumn 15, Issue 4, 1994, Pages 117-119

  Wang, Janet ^a   Kistler, Neal ^a   Woo, Jason ^a   Viswanathan, C R ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CAPACITANCE; CHARGE CARRIERS; ELECTRIC FIELD EFFECTS; ELECTRIC VARIABLES MEASUREMENT; GATES (TRANSISTOR); SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY;

EFFECTIVE CHANNEL MOBILITY; EFFECTIVE VERTICAL ELECTRIC FIELD; FIELD EFFECT MOBILITY; FULLY DEPLETED SOI MOSFET; MOBILITY FIELD BEHAVIOR; SOI BACK-GATE BIAS; TWO DIMENSIONAL SIMULATION;

MOSFET DEVICES;

EID: 0028416842     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.285411     Document Type: Article

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