Quantum-Mechanical Effects on the Threshold Voltage of Ultrathin-SOI nMOSFET’s

IEEE Electron Device Letters

Volumn 14, Issue 12, 1993, Pages 569-571

  Omura, Yasuhisa ^a   Horiguchi, Seiji ^a   Tabe, Michiharu ^a   Kishi, K ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MOS DEVICES; QUANTUM THEORY; SEMICONDUCTOR DEVICES;

ELECTRON DENSITY; IONIZED IMPURITY DENSITY; QUANTUM MECHANICAL METHODS; SHORT CHANNEL EFFECTS; THREE DIMENSIONAL TRANSPORT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0027886706     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.260792     Document Type: Article

References (6)

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2. M. Yoshimi, T. Wada, K. Kato, and H. Tango, “High performance SOIMOSFET using ultra-thin SOI film,” IEEE IEDM, Tech. Dig., pp. 640–643, 1987.
3. Y. Omura, S. Nakashima, K. Izumi, and T. Ishii, “0.1-μm-gate, ultrathin-film CMOS devices using SIMOX substrate with 80-nm-thick buried oxide layer,” IEEE Trans. Electron. Devices, vol. 40, pp. 1019–1022, 1993.
4. E. R. Worley, “Theory of the fully-depleted SOS/MOS transistor,” Solid-State Electronics, vol. 23, pp. 1107–1111, 1980.
5. D. J. Frank, S. E. Laux, and M. V. Fischetti, “Monte Carlo simulation of a 30 nm dual-gate MOSFET,” IEEE IEDM, Tech. Dig., pp. 553–556, 1992.
6. S. M. Sze, Physics of Semiconductor Devices, 2nd ed., New York: Wiley-Interscience, 1981, p. 367.