0.1-μ m-gate, ultrathin-film CMOS devices using SIMOX substrate with 80-nm-Thick buried oxide layer

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1991-January, Issue , 1991, Pages 675-678

  Omura, Y ^a   Nakashima, S ^a   Izumi, K ^a   Ishii, T ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Delay effects; Fabrication; Guidelines; MOS devices; MOSFET circuits; Power capacitors; Propagation delay; Semiconductor films; Silicon; Substrates

Indexed keywords

CMOS INTEGRATED CIRCUITS; DESIGN; ELECTRON BEAM LITHOGRAPHY; ELECTRON DEVICES; FABRICATION; MOS CAPACITORS; MOS DEVICES; RECONFIGURABLE HARDWARE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SILICON; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; ULTRATHIN FILMS;

DELAY EFFECTS; GUIDELINES; MOSFET CIRCUITS; POWER CAPACITOR; PROPAGATION DELAYS; SEMICONDUCTOR FILMS;

MOSFET DEVICES;

EID: 33746189368     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1991.235332     Document Type: Conference Paper

References (0)