Two-Dimensional Simulation And Measurement Of High-Performance Mosfet's Made On A Very Thin Soi Film

IEEE Transactions on Electron Devices

Volumn 36, Issue 3, 1989, Pages 493-503

  Yoshimi, Makoto ^a   Hazama, Hiroaki ^a   Takahashi, Minoru ^a   Kambayashi, Shigeru ^a   Wada, Tetsunori ^a   Kato, Kouichi ^a   Tango, Hiroyuki ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; SEMICONDUCTING SILICON;

CAPACITANCE COUPLING MODELS; SILICON-ON-INSULATOR TECHNOLOGY; SUBTHRESHOLD CHARACTERISTICS;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0024629437     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.19959     Document Type: Article

References (22)

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