Inductively coupled plasma etch damage in GaAs and InP Schottky diodes

Journal of the Electrochemical Society

Volumn 144, Issue 4, 1997, Pages 1417-1422

  Lee, J W ^a,e   Abernathy, C R ^a,e   Pearton, S J ^a,e   Ren, F ^b,e   Hobson, W S ^b,e   Shul, R J ^c,e   Constantine, C ^d   Barratt, C ^d  

^a University of Florida   (United States)

^b LUCENT TECHNOLOGIES   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

^d Plasma Therm IP   (United States)

^e ELECTROCHEMICAL SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON CYCLOTRON RESONANCE; IONS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR PLASMAS;

INDUCTIVELY COUPLED PLASMA; ION FLUX; ION-INDUCED DAMAGE;

PLASMA ETCHING;

EID: 0031117673     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837604     Document Type: Article

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