Effects of H2 plasma exposure on GaAs/AlGaAs heterojunction bipolar transistors

Solid-State Electronics

Volumn 41, Issue 6, 1997, Pages 829-833

  Lee, J W ^a   Abernathy, C R ^a   Pearton, S J ^a   Ren, F ^b   Shul, R J ^c   Constantine, C ^c   Barratt, C ^c  

^a UNIVERSITY OF FLORIDA   (United States)

^b LUCENT TECHNOLOGIES   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODES; DRY ETCHING; ELECTRON CYCLOTRON RESONANCE; GAIN MEASUREMENT; HYDROGEN; PASSIVATION; RADIATION DAMAGE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

CHUCK POWERS; CURRENT GAIN; INDUCTIVELY COUPLED PLASMA (ICP);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031164139     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00026-9     Document Type: Article

References (24)

1. Honjo, K., Solid St. Electron 1995, 38, 1569.
2. Hafizi, M. and Stanchina, W. E., in InP HBTs: Growth, Processing and Devices, ed. B. Jalali and S. J. Pearton, Artech House, Boston, 1994, Ch. 5.
3. Asbeck, P. M., Solid St. Electron 1995, 38, 1691.
4. Kim, M. E., Bayraktaraglu, B. and Gupta, A., in HEMTs and HBTs: Devices Fabrication and Circuits, ed. F. Ali and A. Gupta, Artech House, Boston, 1991.
5. Ren, F., Mat. Res. Soc. Symp. Proc., 1993, 300, pp. 15.
6. Beam III, E. A., Brar, B., Broekaert, T. P. E., Chau, H. F., Liu, W. and Seabaugh, A. C., Mat. Res. Soc. Symp. Proc., 1996, 421, pp. 3.
7. Pearton, S. J., Ren, F., Abernathy, C. R., Hobson, W. S., Fullowan, T. R., Esagui, R. and Lothian, J. R., Appl. Phys. Lett., 1992, 61, 556.
8. Fullowan, T. R., Pearton, S. J., Kopf, R. F. and Smith, P. R., J. Vac. Sci. Technol. B. 1991, 9, 1445.
9. Thomas III, S., Chen, H. H., Hanish, C. K., Grizzle, J. W. and Pang, S. W., J. Vac. Sci. Technol. B, 1996, 14, 2531.
10. Ren, F., Fullowan, T. R., Abernathy. C. R., Pearton, S. J., Smith, P. R., Kopf, R. F., Laskowski, E. J. and Lothian, J. R., Electron. Lett., 1991, 27, 1054.
11. Pearton, S. J., in InP HBTs: Growth, Processing and Devices, ed. B. Jalali and S. J. Pearton, Artech House, Boston, 1994, Ch. 2.
12. Hayes, T. R., in InP and Related Materials: Processing, Technology and Devices, ed. A. Katz, Artech House, Boston, 1992, Ch. 8.
13. Pearton, S. J., Int. J. Mod. Phys. B, 1994, 8, 1781.
14. Lee, J. W., Pearton, S. J., Santana, C., Mileham, J. R., Lambers, E. S., Abernathy, C. R., Ren, F. and Hobson, W. S., J. Electrochem. Soc., 1996, 143, 1093.
15. Melville, D. L., Simmons, J. G. and Thompson, D. A., J. Vac. Sci. Technol. B, 1993, 11, 2038.
16. Wilkinson, C. D. W., Superlatt. Microstruct., 1990, 7, 381.
17. Asmussen, J., J. Vac. Sci. Technol. A, 1989, 7, 883.
18. High Density Plasma Sources, ed. O. A. Popov. Noyes Publications, Park Ridge NJ, 1996.
19. Leiberman, M. A. and Lichtenburg, A. J., Principles of Plasma Discharges and Materials Processing, John Wiley and Sons, NY, 1994.
20. Chen, F. F., in High Density Plasma Sources, ed. O. A. Popov, Noyes Publications, Park Ridge, NJ, 1996, Ch. 1.
21. Abernathy, C. R., Mat. Sci. Eng. Rep. R, 1995, 14, 203.
22. Ren, F., Abernathy, C. R., Pearton, S. J., Fullowan, T. R., Lothian, J. R., Wisk. P., Chen, Y. K., Hobson, W. S. and Smith, P. R., Electron. Lett., 1991, 27, 2391.
23. Pearton, S. J., Corbett, J. W. and Stavola, M., Hydrogen in Crystalline Semiconductors. Springer-Verlag, Heidelberg, 1991.
24. Pearton, S. J., Mat. Sci. Rep., 1990, 4, 313.