Cl2/Ar plasma etching of binary, ternary, and quaternary In-based compound semiconductors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 4, 1996, Pages 2567-2573

  Lee, J W ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; CHLORINE; ELECTRON CYCLOTRON RESONANCE; MICROWAVES; PRESSURE EFFECTS; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE ROUGHNESS;

ETCH RATES; NEUTRAL ION RATIO; RADIOFREQUENCY POWER;

PLASMA ETCHING;

EID: 0030193133     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588769     Document Type: Article

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