Sidewall and surface induced damage comparison between reactive ion etching and inductive plasma etching of InP using a CH4/H2/O2 gas mixture

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 14, Issue 3, 1996, Pages 1056-1061

  Etrillard, J ^a   Heliot F ^a   Ossart, P ^a   Juhel, M ^a   Patriarche, G ^a   Carcenac, P ^b   Vieu, C ^b   Puech, M ^c   Maquin, P ^c  

^a ORANGE LABS   (France)

^b CNRS   (France)

^c NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 5844379814     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580133     Document Type: Review

References (6)

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