Neutron effects in high-power GaAs laser diodes

IEEE Transactions on Nuclear Science

Volumn 36, Issue 6, 1989, Pages 2076-2082

  Carson, R F ^a   Chow, W W ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NEUTRONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DIODES;

FACET DAMAGE; QUANTUM WELL DEVICES; THRESHOLD CURRENTS;

LASERS, SEMICONDUCTOR;

EID: 0024917490     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.45407     Document Type: Article

References (10)

1. P. S. Cross, G. L. Harnagel, W. Streifer, D. R. Scifres, and D. F. Welsh “Ultrahigh-Power Semiconductor Diode Laser Arrays,” Science, vol. 237, pp.1305-1309, September 1987.
2. C. E. Barnes, “Radiation-Hardened Optoelectronic Components: Sources,” Proc. of the SPIE vol. 616 pp. 248–253, 1986.
3. C. E. Barnes & J. J. Wiczer, “Radiation Effects in Optoelectronic Devices,” Report SAND84-0771, Albuquerque, NM: Sandia National Laboratories, May 1984.
4. D. L. Begley, D. K. Wagner, and D. S. Hill “Advanced Laser Diode Structures for Space Communication Systems,” Proc. of the SPIE, vol. 756, p.19 (1987).
5. R. F. Carson and S. K. Fries, “A Radiation-Tolerant Laser Diode Component for Explosive and Pyrotechnic Ignition”, Report SAND88-2999, Albuquerque, NM: Sandia National Laboratories, June 1989.
6. R. F. Carson, “Radiation Effects in Semiconductor Laser Diode Arrays,” Proc. of the SPIE, vol. 994, pp.188-194, 1988.
7. G. A. Zawadzkas, P.A. Kuenstler, and L. M. Choate, “Sandia National Laboratories Radiation Facilities”, 3rd Ed., Report SAND83-0598, Albuquerque, NM: Sandia National Laboratories, December 1985.
8. G. H. B. Thompson, Physics of Semiconductor Laser Devices, Chicester UK: John Wiley & Sons (1980).
9. H. Kressel and J. K. Butler, Semiconductor Lasers and Heterojunction junction LEDs, New York: Academic Press (1977).
10. Spectra Diode Labs “Technical Notes”: San Jose, CA 95134.