Large-Area Wafer Processing for 0.78-μm AlGaAs Laser Diodes

IEEE Photonics Technology Letters

Volumn 7, Issue 10, 1995, Pages 1101-1103

  Nagai, Y ^a   Shiba, T ^a   Kunitsugu, Y ^a   Miyashita, M ^a   Karakida, S ^a   Watanabe, H ^a   Shima, A ^a   Nagahama, K ^a   Otsubo, M ^a   Ikeda, K ^a   Susaki, W ^b  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b OSAKA ELECTRO COMMUNICATION UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; ETCHING; HETEROJUNCTIONS; INTEGRATED CIRCUITS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL WAVEGUIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

LARGE AREA WAFER PROCESSING; RIDGE WAVEGUIDE; SELECTIVE WET ETCHING; TRIPLE QUANTUM WELL SEPARATE CONFINEMENT HETEROSTRUCTURE;

SEMICONDUCTOR LASERS;

EID: 0029394358     PISSN: 10411135     EISSN: 19410174     Source Type: Journal    
DOI: 10.1109/68.466556     Document Type: Article

References (7)

1. Y. Ohta, T. Yagi, H. Kagawa, H. Higuchi, K. Tamari, and Y. Kashimoto, “780 nm high-power laser diode fabricated metal organic chemical vapor deposition (MOCVD) technique,” in Laser-Diode Technol. Appl. II, Proc., SPIE, Los Angeles, CA, vol. 1219, 1990.
2. S. Yamashita, S. Nakatsukasa, K. Uchida, T. Kawano, and T. Kajimura, “High-power 780 nm AlGaAs quantum-well lasers and their reliable operation,” IEEE J. Quantum Electron., vol. 27, pp. 1544–1549, 1991.
3. A. Shima, M. Miyashita, T. Miura, T. Kadowaki, M. Hayafuzi, M. Aiga, and W. Susaki, “Uniform and high-power characteristics of 780-nm AlGaAs TQW laser diodes fabricated by large-scale MOCVD,” IEEE J. Quantum Electron., vol. 30, pp. 24–30, 1994.
4. M. Druminski, R. Gessner, F. Kappeler, H. Westermeier, H.-D. Wolf, and K.-H. Zchauer, “MO VPE (AI, Ga)As/GaAs 870 nm oxide stripe lasers with highly uniform laser characteristics,” Jpn. J. Appl. Phys., vol. 25, pp. L17-L20, 1986.
5. Y. Mihashi, M. Miyashita, N. Hayafuji, N. Kaneno, S. Kageyama, S. Karakida, H. Kizuki, A. Shima, and T. Murotani, “Large-scale met alorganic chemical vapor deposition growth of highly reliable 780 nm AlGaAs multiple quantum well high-power lasers,” J. Crystal Growth. vol. 133, pp. 281–288, 1993.
6. P. Vettiger, M. K. Benedict, G.-L. Bona, P. Buchmann, E. C. Cahoon, K. Datwyler, H.-P. Dietrich, A. Moser, H. K. Seitz, O. Voegeli, D. J. Webb, and R. Wolf, “Full-wafer technology—A new approach to large-scale fabrication and integration,” IEEE J. Quantum Electron., vol. 27, pp. 1319–1331, 1991.
7. A. Shima, T. Miura, T. Kadowaki, M. Hayafuzi, M. Miyashita, S. Karakida, N. Kaneno, H. Kizuki, E. Omura, M. Aiga, and K. Ikeda, “High-power TQW AlGaAs laser with inner-stripe structure,” in Laser-Diode Technol. Applicat., Proc. SPIE, vol. 1634, 1992, pp. 321–328.