Invited paper: Radiation-hardened optoelectronic components: Sources

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 616, Issue , 1986, Pages 248-253

  Barnes, C E ^a  

^a AEROSPACE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMMUNICATION SATELLITES; MILITARY APPLICATIONS; OPTICAL COMMUNICATION; OPTICAL INSTRUMENTS; OPTOELECTRONIC DEVICES;

LIGHT OUTPUT DEGRADATION; OPTOELECTRONIC COMPONENTS; OPTOELECTRONIC SYSTEMS; PERMANENT DAMAGE; RADIATION EXPOSURE; RADIATION-HARDENED;

RADIATION EFFECTS;

EID: 0005174739     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.961060     Document Type: Conference Paper

References (9)

1. C. E. Barnes and J. J. Wiczer, “Radiation Effects in Optoe1ectronic Devices,” Sandia National Laboratories Report Number SAND-84-0771, Albuquerque, NM, May, 1984.
2. C. E. Barnes, “Radiation Effects in Pigtailed GaAs and GaAlAs LEDs,” Air Force Wright Aeronautical Laboratories Report Number AFWAL-TR-81-1086, Wright Patterson AFB, Ohio, June, 1981.
3. C. E. Barnes and K. J. Soda, “Application of Damage Constants in Gamma Irradiated Amphoterica1ly Si Doped GaAs LEDs,” IEEE Trans. Nuc. NS-23, 1664 (1976).
4. L. W. Aukerman, M. F. Millea and M. McColl, “Effects of Radiation Damage on the Behavior of GaAs pn Junctions,” IEEE Trans. Nuc. Sci. NS-13, No. 6, 194 (1976).
5. R. A. Polimadei, S. Share, A. S. Epstein, R. J. Lynch and D. Sullivan, “Performance of GaAlAs Light Emitting Diodes in Radiation Environments,” IEEE Trans. Nuc. Sci. NS-21, No. 6, 96 (1974)
6. C. E. Barnes, “Development of Efficient, Radiation-Insensitive GaAs:Zn LEDs,” IEEE Trans. Nuc. Sci. NS-24, 2309 (1977).
7. C. E. Barnes, “Increased Radiation Hardness of GaAs Laser Diodes at High Current Densities,” J. Appl. Phys. 45, 3485 (1975).
8. N. G. Basov, Yu, A. Drozhbin, Yu, P. Zakharov, V. V. Nikitin, A. S. Semenov, B. NM. Stepanov, A. M. Toimachev and V. A. Yakovlev, “Effect of Injection Current on the Time Dependence of the Emission from GaAs Lasers,” Sov. Phys.-Solid State 8, 2254 (1967).
9. C. E. Barnes, “The Effect of Neutron Irradiation on the High Temperature Operation of Injection Laser Diodes,” Proc. SPIE 506, 218 (1984).