Electron and neutron radiation-induced order effect in gallium arsenide

IEEE Transactions on Nuclear Science

Volumn 40, Issue 6, 1993, Pages 1350-1359

  Khanna, Shyam M ^a   Rejeb, Chedly ^b   Jorio, Anouar ^b   Parenteau, Martin ^b   Carlone, Cosmo ^b   Gerdes, John W ^c  

^a DEFENCE RESEARCH AND DEVELOPMENT CANADA   (Canada)

^b UNIVERSITÉ DE SHERBROOKE   (Canada)

^c US Army Proving Grounds   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHARGE CARRIERS; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ELECTRON TRANSPORT PROPERTIES; FISSION REACTIONS; NEUTRONS; ORDER DISORDER TRANSITIONS; OSCILLATIONS; PHOTOLUMINESCENCE; RADIATION DAMAGE; SEMICONDUCTING GALLIUM ARSENIDE;

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON RADIATION INDUCED ORDER EFFECT; FISSION SPECTRUM NEUTRON IRRADIATION; FLUENCE; LASER EXCITATION; METALORGANIC CHEMICAL VAPOR DEPOSITION METHOD; NEUTRON RADIATION INDUCED ORDER EFFECT;

RADIATION EFFECTS;

EID: 0027853280     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.273532     Document Type: Article

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