Uniform and High-Power Characteristics of 780-nm AlGaAs TQW Laser Diodes Fabricated by Large-Scale MOCVD

IEEE Journal of Quantum Electronics

Volumn 30, Issue 1, 1994, Pages 24-30

  Shima, Akihiro ^a   Miyashita, Motoharu ^a   Miura, Takeshi ^a   Tomoka, Kadowaki ^a   Hayafuji, Norio ^a   Aiga, Masao ^a   Susaki, Wataru ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; CHEMICAL VAPOR DEPOSITION; CONTROLLABILITY; ELECTRIC CURRENTS; EPITAXIAL GROWTH; LASER MODES; LSI CIRCUITS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; WSI CIRCUITS;

ALUMINUM GALLIUM ARSENIDE; EPITAXIAL WAFERS; LIGHT OUTPUT POWER; METALORGANIC CHEMICAL VAPOR DEPOSITION; SEPARATE CONFINEMENT HETEROSTRUCTURES; TRIPLE QUANTUM WELLS; UNIFORMITY;

SEMICONDUCTOR LASERS;

EID: 0028272689     PISSN: 00189197     EISSN: 15581713     Source Type: Journal    
DOI: 10.1109/3.272057     Document Type: Article

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