Proton damage in laser diodes and light-emitting diodes (Leds)

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 328, Issue , 1982, Pages 83-87

  Arimura, I ^a   Barnes, C E ^b  

^a BOEING COMPANY   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATTENUATION; DATA ORIENTATION; LASER DIODES; LEDS; LOW ENERGY PROTON IRRADIATIONS; SEMICONDUCTOR LASERS;

SEMICONDUCTOR DIODES;

EID: 0020301830     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.933889     Document Type: Conference Paper

References (8)

1. C. E. Barnes, J. Appl. Physics 45, 3485 (1974).
2. C. E. Barnes, “Radiation Effects in Optoelectronic Devices,” Sandia Report No. SAND76-0726, March, 1977.
3. B. H. Rose and C. E. Barnes (to be published).
4. J. F. Janni, paper presented at the 1981 IEEE Conf. on Nucl. & Space Radiation Effects, Seattle, VTA, July 21-24, 1981.
5. I. Arimura (to be published).
6. High Efficiency GaAs Solar Cell,” AFAPL-TR-78-96, January 1979.
7. Gallium Arsenide Solar Concentrator Hardness Study,” AFAPL-TR-78-30, May 1978
8. D. M. J. Compton and R. A. Cesena, IEEE Trans, on Nucl. Sci. NS-14, No. 6, 55 (1967).