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Volumn 42, Issue 6, 1995, Pages 2104-2107

The Energy Dependence of Lifetime Damage Constants in GaAs LEDs for 1 – 500 MeV Protons

Author keywords

[No Author keywords available]

Indexed keywords

DOSIMETRY; ELECTRON ENERGY LEVELS; LIGHT EMITTING DIODES; MATHEMATICAL MODELS; PROTONS; SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0029517909     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.489259     Document Type: Article
Times cited : (81)

References (10)
  • 1
    • 0001045449 scopus 로고
    • Displacement Damage Equivalent to Dose in Silicon Devices
    • 30 Jan.
    • C. J. Dale, P. W. Marshall, G. P. Summers and E. A. Wolicki, “Displacement Damage Equivalent to Dose in Silicon Devices”, Appl. Phys. Lett. 54, (5), 451–453, 30 Jan. 1989.
    • (1989) Appl. Phys. Lett. , vol.54 , Issue.5 , pp. 451-453
    • Dale, C.J.1    Marshall, P.W.2    Summers, G.P.3    Wolicki, E.A.4
  • 6
    • 0010833153 scopus 로고
    • Effects of Co-60 Gamma Irradiation on Epitaxial GaAs Laser Diodes
    • 15 June
    • C.E. Barnes, “Effects of Co-60 Gamma Irradiation on Epitaxial GaAs Laser Diodes”, Phys. Rev. B, 1, (12), 4735–4746, 15 June, 1970.
    • (1970) Phys. Rev. B , vol.1 , Issue.12 , pp. 4735-4746
    • Barnes, C.E.1
  • 7
    • 0017215124 scopus 로고
    • Application of Damage Constants in Gamma Irradiated Amphoterically Si Doped GaAs LEDs
    • Dec.
    • C. E. Barnes and K. J. Soda, “Application of Damage Constants in Gamma Irradiated Amphoterically Si Doped GaAs LEDs”, IEEE Trans. Nucl. Sci. NS-23, 1664–1670, Dec. 1976.
    • (1976) IEEE Trans. Nucl. Sci. , vol.NS-23 , pp. 1664-1670
    • Barnes, C.E.1    Soda, K.J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.