-
1
-
-
0001045449
-
Displacement Damage Equivalent to Dose in Silicon Devices
-
30 Jan.
-
C. J. Dale, P. W. Marshall, G. P. Summers and E. A. Wolicki, “Displacement Damage Equivalent to Dose in Silicon Devices”, Appl. Phys. Lett. 54, (5), 451–453, 30 Jan. 1989.
-
(1989)
Appl. Phys. Lett.
, vol.54
, Issue.5
, pp. 451-453
-
-
Dale, C.J.1
Marshall, P.W.2
Summers, G.P.3
Wolicki, E.A.4
-
2
-
-
0028697350
-
Co60 Gamma Ray and Electron Displacement Damage Studies of Semiconductors
-
Dec.
-
M. A. Xapsos, G. P. Summers, C. C. Blatchley, C. W. Colerico, E. A. Burke, S. R. Messenger and P. Shapiro, “Co60 Gamma Ray and Electron Displacement Damage Studies of Semiconductors”, IEEE Trans. Nucl. Sci. NS-41, 1945–1949, Dec. 1994.
-
(1994)
IEEE Trans. Nucl. Sci.
, vol.NS-41
, pp. 1945-1949
-
-
Xapsos, M.A.1
Summers, G.P.2
Blatchley, C.C.3
Colerico, C.W.4
Burke, E.A.5
Messenger, S.R.6
Shapiro, P.7
-
3
-
-
0025660893
-
An Improved Displacement Damage Monitor
-
Dec.
-
A.L. Barry, R. Maxseiner, R. Wojcik, M.A. Briere and D. Bräunig, “An Improved Displacement Damage Monitor”, IEEE Trans. Nucl. Sci. NS-37, 1726–1731, Dec., 1990.
-
(1990)
IEEE Trans. Nucl. Sci.
, vol.NS-37
, pp. 1726-1731
-
-
Barry, A.L.1
Maxseiner, R.2
Wojcik, R.3
Briere, M.A.4
Bräunig, D.5
-
4
-
-
0023565384
-
Energy Dependence of Proton-Induced Damage in GaAs
-
Dec.
-
E.A. Burke, C.J. Dale, A.B. Campbell, G.P. Summers, W. J. Stapor, M. A. Xapsos, T. Palmer and R. Zuleeg, “Energy Dependence of Proton-Induced Damage in GaAs” IEEE Trans. Nucl. Sci. NS-34, 1220–1226, Dec. 1987.
-
(1987)
IEEE Trans. Nucl. Sci.
, vol.NS-34
, pp. 1220-1226
-
-
Burke, E.A.1
Dale, C.J.2
Campbell, A.B.3
Summers, G.P.4
Stapor, W.J.5
Xapsos, M.A.6
Palmer, T.7
Zuleeg, R.8
-
5
-
-
0024174933
-
Displacement Damage in GaAs Structures
-
Dec.
-
G. P. Summers, E.A. Burke, M.A. Xapsos, C.J. Dale, P.W. Marshall and E.L. Petersen, “Displacement Damage in GaAs Structures”, IEEE Trans. Nucl. Sci. NS-35, 1221–1226, Dec. 1988.
-
(1988)
IEEE Trans. Nucl. Sci.
, vol.NS-35
, pp. 1221-1226
-
-
Summers, G.P.1
Burke, E.A.2
Xapsos, M.A.3
Dale, C.J.4
Marshall, P.W.5
Petersen, E.L.6
-
6
-
-
0010833153
-
Effects of Co-60 Gamma Irradiation on Epitaxial GaAs Laser Diodes
-
15 June
-
C.E. Barnes, “Effects of Co-60 Gamma Irradiation on Epitaxial GaAs Laser Diodes”, Phys. Rev. B, 1, (12), 4735–4746, 15 June, 1970.
-
(1970)
Phys. Rev. B
, vol.1
, Issue.12
, pp. 4735-4746
-
-
Barnes, C.E.1
-
7
-
-
0017215124
-
Application of Damage Constants in Gamma Irradiated Amphoterically Si Doped GaAs LEDs
-
Dec.
-
C. E. Barnes and K. J. Soda, “Application of Damage Constants in Gamma Irradiated Amphoterically Si Doped GaAs LEDs”, IEEE Trans. Nucl. Sci. NS-23, 1664–1670, Dec. 1976.
-
(1976)
IEEE Trans. Nucl. Sci.
, vol.NS-23
, pp. 1664-1670
-
-
Barnes, C.E.1
Soda, K.J.2
-
10
-
-
0023596834
-
Neutron Damage Equivalence for Silicon, Silicon Dioxide, and GaAs
-
Dec.
-
T.F. Luera, J.G. Kelly, H.J. Stein, M.S. Lazo, C.E. Lee and L. R. Dawson, “Neutron Damage Equivalence for Silicon, Silicon Dioxide, and GaAs”, IEEE Trans. Nucl. Sci. NS-34, 1557–1563, Dec. 1987.
-
(1987)
IEEE Trans. Nucl. Sci.
, vol.NS-34
, pp. 1557-1563
-
-
Luera, T.F.1
Kelly, J.G.2
Stein, H.J.3
Lazo, M.S.4
Lee, C.E.5
Dawson, L.R.6
|