Protonic nonvolatile field effect transistor memories in si/sio2/si structures

IEEE Transactions on Nuclear Science

Volumn 44, Issue 6 PART 1, 1997, Pages 1789-1798

  Warren, W L ^a   Fleetwood, D M ^b   Schwank, J R ^a   Shaneyfelt, M R ^a   Draper, B L ^b   Winokur, P S ^b   Knoll, M G ^b   Vanheusden, K ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; FIELD EFFECT TRANSISTORS; ION BOMBARDMENT; NONVOLATILE STORAGE; PROTONS; RADIATION DAMAGE; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; SILICON ON INSULATOR TECHNOLOGY;

PROTONIC NONVOLATILE FIELD EFFECT TRANSISTOR MEMORIES;

SEMICONDUCTOR STORAGE;

EID: 0031375376     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.658944     Document Type: Article

References (29)

1. N.M. Johnson, C. Herring, and D..T. Chadi, Interstitial H and neutralization of shallow-donor impurities in single crystal Si, Phys. Rev. Lett. 56, 769 (1986).
2. S.J. Pearton, J.W. Corbett, and T.S. Shi, Hydrogen in crystalline semiconductors, Appl. Phys. A43, 153 (1987).
3. E. H. Poindexter, MOS interface states: overview and physicochemical perspective, Semicond. Sei. Technol. 4, 961 (1989).
4. J. F. Conley and P. M Lenahan, Molecular hydrogen, E' center hole traps, and radiation induced interface traps in MOS devices, IEEE Trans. Nucl. Sei. NS40, 1335 (1993).
5. 2 on Si, J. Non-Cryst. Solids 126, 173 (1990).
6. 2 on Si, Appl. Pliys. Lett. 62, 40 (1993).
7. J.R. Schwank, D.M. Fleetwd, P.S. Winokur, P.V. Dressendorfer, D.C. Turpin, and D.T. Sanders, The role of hydrogen in radiation-induced detect formation in polysilicon gate MOS devices, IEEE Trans. Nucl. Sei. NS34, 1152 (1987).
8. 2 by hydrogénation, Appl. Phys. Lett. 64, 2575 (1994).
9. 2 interface of hardened MOS capacitors, IEEE Trans. Nucl. Sei. NS24, 2113 (1977).
10. 2 MOS structures, IEEE Trans. Nucl. Sei. NS27, 1651 (1980).
11. N. S. Saks and R. W. Rendell, Time dependence of the interface trap build-up in deuterium-annealed oxides after irradiation, Appl. Phys. Lett. 61, 3014 (1992). [14] D. .1. DiMaria, Temperature dependence of trap creation in silicon dioxide, J. Appl. Phys. 68, 5234 (1990). [15] N. Lifshitz and G. Smolinsky, Detection of water-related charge in electronic dielictrics, Appl. Phys. Lett. 55, 408 (1989).
12. 2 thin films, Nature 386, 587 (1997). [17] P. M. Lenahan and P. V. Dressendorfer, Radiation induced paramagnetic defects in MOS structures, IEEE Trans. Nucl. Sei. NS29, 1459 (1982).
13. 2/Si structures, J. Appl. Phys. 79, 2302 (1996).
14. 2 layers, Appl. Phys. Lett. 59, 2275 (1991).
15. S. Cristoloveanu and S. S. Li, in Electrical characterization of silicon-on-insulator materials ami devices, Kluwer Academic Publishers, Boston, MA, p. 104, 1995.
16. B. L. Sharma, in Diffusion in Semiconductors, Trans. Tech. Pub., Germany, p. 87, 1970.
17. D.M. Fleetwood, M.R. Shaneyfelt, W.L. Warren, J.R. Schwank, T.L. Meisenheimer, and P.S. Winokur, Border Traps: Issues for MOS Radiation Response and Long-Term Reliability, Micoelectron. Reliab. 35, 403 (1995).
18. 2 films, IEEE Trans. Elect. Dev. ED-14, 749 (1967).
19. 2 thin films on Si, Appl. Phys. Lett. 68, 2993 (1996).
20. 2, IEEE Trans. Nucl. Sei. NS44, No. 6 (1997).
21. 2 Thin Films, Appl. Phys. Lett., submitted.
22. R.E. Stahlbush, A.H. Edwards, D.L. Griseom and B..T. Mrstik, Post-irradiation cracking of H and formation of interface states in irradiated MOSFETs, J. Appl. Phys. 73, 658 (1993).
23. 2 interface state formation during irradiation and during post-irradiation exposure of hydrogen environment, Appl. Phys. Lett. 59, 3012(1991).
24. S. Aritome, R. Shirota, G. Hemink, T. Endoh, and F. Masuoka, Reliability issues of Flash Memory Cells, Proc. IEEE 81, 776 (1993).
25. P.C. Fazan, Trends in the Development of ULSI DRAM Capacitors, Integ. Ferroelectrics 4, 247 (1994).
26. E.S. Snyder, P.J. McWhorter, T.A. Dellin, and J.D. Sweeman, Radiation Response of Floating Gate EEPROM Memory Cells, IEEE Trans. Nucl. Sei. NS36, 2131 (1989).
27. T.F. Wrobel, Radiation Characterization of a 28C256 EEPROM, IEEE Trans. Nucl. Sei. NS36, 2247 (1989).
28. C.H. Seager, R.A. Anderson, and J.K. G. Panitz, The Diffusion of H in Si and Mechanisms of Unintentional Hydrogénation During Ion Beam Processing, J. Mater. Res. 2, 96 (1987).
29. D.M. Fleetwood, M.J. Johnson, T.L. Emisenheimer, and P.S. Winokur, 1/f Noise, Hydrogen Transport, and Latent Interface Trap Buildup in Irradiated MOS Devices, IEEE Trans. Nucl. Sei. NS44, No. 6 (1997).