SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Physical Review Letters

Volumn 56, Issue 7, 1986, Pages 769-772

Interstitial hydrogen and neutralization of shallow-donor impurities in single-crystal silicon

(3) Johnson, N M a Herring, C a Chadi, D J a

a PALO ALTO RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000687859 PISSN: 00319007 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevLett.56.769 Document Type: Article

Times cited : (332)

References (32)

1
- 0000353360
- (1983) Phys. Rev. Lett. , vol.51 , pp. 2224
- Pankove, J.I.¹ Carlson, D.E.² Berkeyheiser, J.E.³ Wance, R.O.⁴

2
- 2842572993
- (1985) J. Electron. Mater. , vol.14 a , pp. 745
- DeLeo, G.G.¹ Fowler, W.B.²

3
- 0022010357
- (1985) Appl. Phys. Lett. , vol.46 , pp. 421
- Pankove, J.I.¹ Zanzucchi, P.J.² Magee, C.W.³ Lucovsky, G.⁴

4
- 0000614216
- (1985) Phys. Rev. B , vol.31 , pp. 5525
- Johnson, N.M.¹

5
- 0005175352
- (1985) Phys. Rev. , vol.31 , pp. 6861
- DeLeo, G.G.¹ Fowler, W.B.²

6
- 0020833432
- (1983) J. Appl. Phys. , vol.54 , pp. 5864
- Sah, C.-T.¹ Sun, J.Y.-C.² Tzou, J.J.-T.³

7
- 0021386313
- (1984) Appl. Phys. Lett. , vol.44 , pp. 606
- Hansen, W.L.¹ Pearton, S.J.² Haller, E.E.³

8
- 36549098626
- (1984) Appl. Phys. Lett. , vol.45 , pp. 1100
- Pankove, J.I.¹ Wance, R.O.² Berkeyheiser, J.E.³

9
- 36549104436
- (1985) Appl. Phys. Lett. , vol.46 , pp. 787
- Johnson, N.M.¹ Moyer, M.D.²

10
- 0001133709
- (1985) Appl. Phys. Lett. , vol.47 , pp. 874
- Johnson, N.M.¹

11
- 36549098116
- (1985) Appl. Phys. Lett. , vol.47 , pp. 748
- Pankove, J.I.¹ Magee, C.W.² Wance, R.O.³

12
- 0004243285
- (1958) Philips Res. Rep. , vol.13 , pp. 1
- van der Pauw, L.J.¹

13
- 0004005306
- Wiley, New York, 2nd ed., Chap. 1.
- (1981) Physics of Semiconductor Devices
- Sze, S.M.¹

14
- 34547246031
- (1956) Physica (Utrecht) , vol.22 , pp. 849
- Van Wieringen, A.¹ Warmholtz, N.²

15
- 1642577314
- U.S. GPO, Washington, D.C., 2nd ed.
- (1971) JANAF Thermochemical Tables, U.S. National Bureau of Standards NSRDS-NBS37
- Stull, D.R.¹ Prophet, H.²

16
- 84927397232
- These are tabulated in the preceding reference with neglect of nuclear-spin degrees of freedom, and so for consistency they are neglected in the solid as well.

17
- 0007900180
- (1960) J. Phys. Chem. Solids , vol.16 , pp. 144
- Frank, R.C.¹ Thomas, J.E.²

18
- 33749612457
- Theoretical study of the atomic structure of silicon (211), (311), and (331) surfaces
- Phys. Rev. Lett., 41, 1062
- (1978) Physical Review B , vol.29 , pp. 785
- Chadi, D.J.¹

19
- 84927397223
- The parameters for Si are given in Ref. 18. The additional Si-H parameters are ES (H) = - 4.15 eV, Vss σ = - 3.46 eV, and Vs p σ = 1.855 eV.

20
- 84927397221
- It is to be noted that the H—SiH3_ bond energy of 4.09 eV is approximately 0.9 eV larger than the average Si—H bond energy in SiH4_. The tight-binding method accurately predicts this difference.

21
- 4244091320
- (1975) Phys. Rev. B , vol.18 , pp. 2066
- Picraux, S.T.¹ Vook, F.L.²

22
- 0007712457
- edited by, J. H. Albany, Institute of Physics and The Physical Society, London
- (1979) Defects and Radiation Effects in Semiconductors, 1978 , pp. 31
- Picraux, S.T.¹ Vook, F.L.² Stein, H.J.³

23
- 0019015383
- (1980) Solid State Commun. , vol.34 , pp. 283
- Paul, W.¹

24
- 0016470935
- (1975) J. Electron Mater. , vol.4 , pp. 159
- Stein, H.J.¹

25
- 26544473369
- (1979) Phys. Rev. B , vol.20 , pp. 5050
- Pickett, W.E.¹ Cohen, M.L.² Kittel, C.³

26
- 4244147312
- (1983) Phys. Rev. Lett. , vol.50 , pp. 913
- Sahoo, N.¹ Mishra, S.K.² Mishra, K.C.³ Coker, A.⁴ Das, T.P.⁵ Mitra, C.K.⁶ Snyder, L.C.⁷

27
- 35949015833
- (1983) Phys. Rev. Lett. , vol.51 , pp. 207
- Katayama-Yoshida, H.¹ Shindo, K.²

28
- 0017498232
- (1977) Phys. Status Solidi (b) , vol.81 , pp. 637
- Singh, V.A.¹ Weigel, C.² Corbett, J.W.³ Roth, L.M.⁴

29
- 0343209957
- (1983) Phys. Lett. , vol.93 A , pp. 303
- Corbett, J.W.¹ Sahu, S.N.² Shi, T.S.³ Snyder, L.C.⁴

30
- 5944249543
- (1984) Ser. A (Engl. Ed.) , vol.27 , pp. 98
- Tiansheng, S.¹ Sahu, S.N.² Corbett, J.W.³ Snyder, L.C.⁴ Sin⁵

31
- 33744700847
- edited by, J. H. Albany, Institute of Physics and The Physical Society, London
- (1979) Defects and Radiation Effects in Semiconductors, 1978 , pp. 200
- Kleinhenz, R.L.¹ Lee, Y.H.² Singh, V.A.³ Mooney, P.M.⁴ Jaworowski, A.⁵ Roth, L.M.⁶ Corelli, J.C.⁷ Corbett, J.W.⁸

32
- 84927397219
- Relaxation of the silicon lattice around the phosphorus dopant was also taken into account.

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.