MOS interface states: Overview and physicochemical perspective

Semiconductor Science and Technology

Volumn 4, Issue 12, 1989, Pages 961-969

  Poindexter, E H ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 30844431996     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/4/12/001     Document Type: Review

References (65)

1. The Current Understanding of Charges in the Thermally Oxidized Silicon Structure
2. Temperature Dependence of Inversion-Layer Frequency Response in Silicon
3. Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I
4. Radiation-Induced Trivalent Silicon Defect Buildup at the Si-SiO2 Interface in MOS Structures
5. ESR studies of thermally oxidized silicon wafers
6. Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance II
7. A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structures