O interstitial generation and diffusion in high temperature annealed Si/SiO2/Si structures

Journal of Applied Physics

Volumn 79, Issue 5, 1996, Pages 2302-2308

  Devine, R A B ^a   Mathiot, D ^a   Warren, W L ^b   Aspar, B ^c  

^a ORANGE LABS   (France)

^b ADVANCED MATERIALS LABORATORY   (United States)

^c CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001244874     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361155     Document Type: Article

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