Characterization of LT GaAs carrier lifetime in multilayer gaas epitaxial wafers by the transient reflectivity technique

IEEE Transactions on Nuclear Science

Volumn 44, Issue 6 PART 1, 1997, Pages 2290-2297

  McMorrow, Dale ^a,b,c   Melinger, Joseph S ^a,d,e   Knudson, Alvin R ^a,b,d,e   Büchner, Stephen ^a,c,d,e   Ikossi Anastasiou, Kiki ^a,b,c   Moss, Steven C ^a,b,e   Engelhardt, David ^a,d,e   Childs, Timothy ^a,b,c,d,e   Campbell, Arthur B ^a,b,c,d,e  

^a NAVAL RESEARCH LABORATORY   (United States)

^b Îsfa   (United States)

^c LOUISIANA STATE UNIVERSITY   (United States)

^d AEROSPACE CORPORATION   (United States)

^e TLC Precision Wafer Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; CORRELATION METHODS; EPITAXIAL GROWTH; MULTILAYERS; RADIATION EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

CARRIER LIFETIME; EPITAXIAL WAFERS; SINGLE EVENT UPSET (SEU); TRANSIENT REFLECTIVITY TECHNIQUE;

SEMICONDUCTING FILMS;

EID: 0031360061     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.659048     Document Type: Article

References (30)

1. P.W. Marshall, C.J. Dale, T.R. Weatherford, M. Carts, D, McMorrow, A. Peczalski, S. Baier, J. Nohava, and J. Skogen, Heavy Ion SEU Immunity of a GaAs Complementary HIGFET Circuit fabricated on a Low Temperature Grown Buffer Layer", IEEE Trans. Nuc. Sei. NS42,1850 (1995).
2. P.W. Marshall, C.J. Marshall, T.R. Weatherford, D. Fouts, B. Mathes, and M. LaMachia, Effects of Low Temperature Buffer Layer Thickness and Growth Temperature on the SEE Sensitivity of GaAs HIGFET Circuits", presented at NSREC 97, and this issue.
3. M. LaMacchia, personal communication.
4. D. McMorrow, T.R. Weatherford, W.R. Curtice, A.R. Knudson,
5. Buchner, J.S. Melinger, L.H. Tran, and A.B. Campbell, Elimination of Charge-Enhancement Effects in GaAs FETs with an LT GaAs Buffer Layer", IEEE Trans. Nuc. Sei. NS42,1837 (1995).
6. D. McMorrow, T.R. Weatherford, A.R. Knudson, S. Buchner, J.S. Melinger, L.H. Tran, A.B. Campbell, P.W. Marshall, C.J. Dale, and A. Peczalski, S. Baier, Charge-Collection Characteristics of GaAs Heterostructure FETs Fabricated with a Low-Temperature Grown GaAs Buffer Layer", ffiEE Trans. Nuc. Sei., NS43,918 (1996).
7. T.R. Weatherford, D. McMorrow, A.B. Campbell, and W.R. Curtice, Significant Reduction in the Soft Error Susceptibility of GaAs Field-Effect Transistors with a Low-Temperature Grown GaAs Buffer Layer", Appl. Phys. Lett. 67,703 (1995).
8. D. McMorrow, W.R. Curtice, S. Buchner, A.R. Knudson, J.S. Melinger, and A.B. Campbell, Charge-Collection Characteristics of GaAs MESFETs Fabricated with a Low Temperature Grown GaAs Buffer Layer: Computer Simulation", IEEE Trans. Nuc. Sei. NS43, 2904 (1996).
9. T.B. Nords, W. Sha, W.J. Schaff, X.J. Song, Z. LilientalWebber, and E.R. Webber, Transient Absorption of LowTemperature Molecular-Beam Epitaxy Grown GaAs", in OSA Proceedings on Picosecond Electronic and Optoelectronics (Optical Society of America, Washington, D.C., 1991) pp. 244247.
10. S. D. Benjamin, H. S. Loka, A. Othonos, and P. W. E. Smith, Ultrafast Dynamics of Nonlinear Absorption in Low-TemperatureGrown GaAs, Appl. Phys. Lett. 68 (18), 2544-2546 (1996).
11. U. Siegner, R. Fluck, G. Zhang, and U. Keller, Ultrafast HighIntensity Nonlinear Absorption Dynamics in Low-Temperature Grown Gallium Arsenide, Appl. Phys. Lett. 69 (17), 2566-2568 (1996).
12. T. Gong and P.M. Fauchet, Femtosecond Refractive and Absorptive Nonlinearities Due to Real Carriers in GaAs", in Picosecond Electronics and Optoelectronics (Optical Society of America, Washington, DC 1991) pp. 253-259.
13. Z. Liliental-Webber, H.J. Cheng, S. Gupta, J. Whitaker, K. Nichols, and F.W. Smith, Structure and Carrier Lifetime in LTGaAs", J. Elect. Mat., 22,1465 (1993).
14. M. Born and E. Wolf, Principles of Optics (Pergamon Press, Oxford, 1980) pp. 627-633.
15. E. D. Palik, Ed., Handbook of Optical Constants of Solids (Academic Press, New York, 1985) pp. 429-444.
16. W. Fischler, P. Buchberger, R. A. Hopfel, and G. Zandler, Ultrafast Reflectivity Changes in Photoexcited GaAs Schottky Diodes, Appl. Phys. Lett. 68 (20), 2778-2780 (1996).
17. (a) P. J. L. Hervé and L. K. J. Vandamme, Empirical Temperature Dependence of the Refractive Index of Semiconductors, J. App. Phys. 77 (10), 5476-5477 (1995);
18. (b) V. Bardinal, R. Legros, and C. Fontaine, hi situ Measurement of AlAs and GaAs Refractive lindex Dispersion at Epitaxial Growth Temperature, Appl. Phys. Lett. 67 (2), 244-246 (1995).
19. S. M. Sze, Physics of Semiconductor Devices (WileyInterscience, New York, 1981).
20. D. K. Schröder, Semiconductor Material and Device Characterization (Wiley-Merscience, New York, 1990).
21. K. Mochizuki, J.-I. Kasai, and T. Tanoue, Measurement of the Recombination Velocity at Single Crystalline/Polycrystalline GaAs Interfaces Using Time-Resolved photoluminescence, Appl. Phys. Lett. 66 (16), 2092-2094 (1995).
22. A. J. Lochtefeld, M. R. Melloch, J. C. P. Chang, and E. S. Harmon, The Role of Point Defects and Arsenic Precipitates in Carrier Trapping and Recombination hi Low-Temperature Grown GaAs, Appl. Phys. Lett. 69 (10), 1465-1467 (1996).
23. X. Liu, A. Prasad, J. Nishio, E. R. Weber, Z. Liliental-Weber, and W. Walukiewicz, Native Point Defects in Low-TemperatureGrown GaAs, Appl. Phys. Lett. 67 (2), 279-281 (1995).
24. M. H. Chan, S. K. So, K. T. Chan, and F. G. Kellert, Defect Density Measurements of Low Temperature Grown Molecular Beam Epitaxial GaAs by Photothermal Deflection Spectroscopy, Appl. Phys. Lett. 67 (6), 834-836 (1995).
25. S. Marcinkevicius, A. Krotkus, V. Jasutis, K. Bertulis, H. H. Tan, C. Jagadish, and M. Kaminska, Time and Spatially Resolved Photoluminescence Measurements of Nonstoichiometric GaAs, Appl. Phys. Lett. 68 (3), 397-399 (1996).
26. P. Fauchet, G. Wicks, A. Lobad, and T. Gardiner, Trapping and Recombination in LT III-Vs", presented at: Workshop on NonStoichiometric GaAs and Related Materials, March 6,1996, Santa Barbra, CA; to be published.
27. T. Norris, J. Whitiker, C. Sung, H. Wang, and T Sosnowski, Time-Resolved Electron and Hole Trapping and Trap Saturation Dynamics in LT-GaAs", presented at: Workshop on NonStoichiometric GaAs and Related Materials, March 6,1996, Santa Barbra, CA; to be published.
28. D. McMorrow, T.R. Weatherford, S. Buchner, A.R. Knudson, J.S. Melinger, L.H. Tran, A.B. Campbell, Single-Event Phenomena in GaAs Devices and Circuits", IEEE Tran. Nuc. Sei., NS43,628 (1996).
29. D. McMorrow and J.S. Melinger, unpublished work.
30. J.S. Melinger, D. McMorrow, A.R. Knudson, manuscript in preparation.