Charge-collection characteristics of GaAs MESFETs fabricated with a low-temperature grown GaAs buffer layer: Computer simulation

IEEE Transactions on Nuclear Science

Volumn 43, Issue 6 PART 1, 1996, Pages 2904-2912

  McMorrow, Dale ^a   Curtice, Walter R ^a   Buchner, Steve ^b   Knudson, Alvin R ^b   Melinger, Joseph S ^c   Campbell, Arthur B ^c  

^a NAVAL RESEARCH LABORATORY   (United States)

^b KSFA Inc ^*

^c KSFA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; ENERGY GAP; PULSE AMPLIFIERS; RADIATION EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE;

CHARGE COLLECTION; SINGLE EVENT UPSETS (SEU);

MESFET DEVICES;

EID: 0030372109     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.556884     Document Type: Article

References (22)

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