Ultrafast reflectivity changes in photoexcited GaAs Schottky diodes

Applied Physics Letters

Volumn 68, Issue 20, 1996, Pages 2778-2780

  Fischler, W ^a   Buchberger, P ^a   Hopfel R A ^a   Zandler, G ^b  

^a UNIVERSITY OF INNSBRUCK   (Austria)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC FIELDS; MONTE CARLO METHODS; OPTICAL VARIABLES MEASUREMENT; OSCILLATIONS; PLASMAS; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM ARSENIDE;

CARRIER INJECTION; CARRIER PHONON INTERACTION; ELECTRON HOLE PAIRS; PHOTOEXCITATION; REFLECTIVITY;

SCHOTTKY BARRIER DIODES;

EID: 0030146287     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116604     Document Type: Article

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