Ultrafast dynamics of nonlinear absorption in low-temperature-grown GaAs

Applied Physics Letters

Volumn 68, Issue 18, 1996, Pages 2544-2546

  Benjamin, S D ^a   Loka, H S ^a   Othonos, A ^a   Smith, P W E ^a  

^a NONE

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EID: 0000586425     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116178     Document Type: Article

References (10)

1. See, for example, the special issue on low-temperature-grown GaAs and related materials of J. Electron. Mater. 22, (1993).
2. S. D. Benjamin, A. Othonos, and P. W. E. Smith, Electron. Lett. INS 30, 1704 (1994).
3. P. W. E. Smith and S. D. Benjamin, Opt. Eng. INS 34, 189 (1995).
4. S. D. Benjamin, H. S. Loka, and P. W. E. Smith, Can. J. Phys. (to be published).
5. S. D. Benjamin, H. S. Loka, P. W. E. Smith, and A. Othonos, Proceedings CLEO '95 15, 377 (1995).
6. M. Kaminska and E. R. Weber, Semiconductors and Semimetals (Academic, New York, 1993), Vol. 38, pp. 59-89.
7. L. Banyai and S. W. Koch, Z. Phys. B INS 63, 283 (1986).
8. E. Yablonovich, T. Gmitter, J. P. Harbisson, and R. Bhat, Appl. Phys. Lett. AIP 51, 2222 (1987).
9. S. D. Benjamin, H. S. Loka, and P. W. E. Smith, Bull. Am. Phys. Soc. INS 40, 1330 (1995).
10. X. Q. Zhou, H. M. Van Driel, W. W. Ruhle, and K. Ploug, Phys. Rev. B AIP 64, 16148 (1992).