A study of electromigration in aluminum and aluminum-silicon thin film resistors using noise technique

Solid State Electronics

Volumn 32, Issue 1, 1989, Pages 11-16

  Diligenti, A ^a   Bagnoli, P E ^a   Neri, B ^a   Bea, S ^a   Mantellassi, L ^a  

^a UNIVERSITY OF PISA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC MEASUREMENTS--NOISE, SPURIOUS SIGNAL; INTEGRATED CIRCUITS, THIN FILM; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON;

ELECTROMIGRATION; INTERCONNECTION RELIABILITY; THIN FILM INTERCONNECTIONS;

RESISTORS;

EID: 0024481529     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(89)90042-7     Document Type: Article

References (14)

1. Temperature-ramp resistance analysis to characterize electromigration
2. Electromigration and low-frequency resistance fluctuations in aluminum thin-film interconnections
3. Electromigration and failure in electronics: An introduction